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BCP 51M ... BCP 53M
PNP Silicon AF Transistor * For AF driver and output stages * High collector current * Low collector-emitter saturation voltage * Complementary types: BCP 54M...BCP 56M(NPN)
4 5 3 2 1
VPW05980
Type BCP 51M BCP 52M BCP 53M
Marking Ordering Code Pin Configuration AAs AEs AHs Q62702-C2592 1 = B Q62702-C2593 Q62702-C2594 2=C 3=E 4 n.c. 5=C
Package SCT-595
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Symbol BCP 51M BCP 52M BCP 53M Unit 45 45 5 60 60 5 80 100 5 V
VCEO VCBO VEBO
DC collector current Peak collector current Base current Peak base current Total power dissipation, T S 77 C Junction temperature Storage temperature
IC I CM IB I BM Ptot Tj T stg
1 1.5 100 200 1.7 150 -65...+150
mA A mA W C
Thermal Resistance Junction ambient 1) Junction - soldering point
RthJA RthJS
98 43
K/W
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu Semiconductor Group Semiconductor Group 11
Au 1998-11-01 -11-1998
BCP 51M ... BCP 53M
Electrical Characteristics at TA = 25C, unless otherwise specified. Symbol Parameter Values min. DC Characteristics Collector-emitter breakdown voltage typ. max.
Unit
V(BR)CEO
BCP 51M BCP 52M BCP 53M 45 60 80 100 20 250 0.5 1
V
I C = 10 mA, I B = 0
Collector-base breakdown voltage
V(BR)CBO
BCP 51M BCP 52M BCP 53M 45 60 100
I C = 100 A, IB = 0
Emitter-base breakdown voltage
V(BR)EBO I CBO I CBO hFE hFE hFE VCEsat VBE(ON)
5 25 40 25 -
I E = 10 A, I C = 0
Collector cutoff current nA A -
VCB = 30 V, I E = 0
Collector cutoff current
VCB = 30 V, I E = 0 , TA = 150 C
DC current gain 1)
I C = 5 mA, V CE = 2 V
DC current gain 1)
I C = 150 mA, V CE = 2 V
DC current gain 1)
I C = 500 mA, V CE = 2 V
Collector-emitter saturation voltage1) V
I C = 500 mA, IB = 50 mA
Base-emitter voltage 1)
I C = 500 mA, V CE = 2 V
AC Characteristics Transition frequency
fT
-
100
-
MHz
I C = 50 mA, V CE = 10 V, f = 100 MHz
1) Pulse test: t 300s, D = 2% Semiconductor Group Semiconductor Group 22
Au 1998-11-01 -11-1998
BCP 51M ... BCP 53M
Total power dissipation P tot = f (T A*;T S) * Package mounted on epoxy
DC current gain hFE = f (I C)
VCE = 2V
10 3
BCP 51...53 EHP00261
2000
mW
h FE
1600 1400
5
TS
10 2
100 C 25 C -50 C
P tot
1200
5
1000 800 600 400 200 0 0
TA
10 1 5
20
40
60
80
100
120 C
150
10 0 0 10
10 1
10 2
10 3
mA 10 4
TA,TS
C
Permissible Pulse Load R thJS = f (tp)
Permissible Pulse Load
Ptotmax / PtotDC = f (tp)
10 2 10 3
RthJS
10 1
Ptotmax / PtotDC
K/W
-
10 2
10 0
0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
10 1
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 -1 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
10 0 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
TS
tp
Semiconductor Group Semiconductor Group
33
Au 1998-11-01 -11-1998
BCP 51M ... BCP 53M
Collector cutoff current I CBO = f (T A)
Transition frequency fT = f (IC)
VCB = 30V
BCP 51...53 EHP00262
VCE = 10 V
10 3 MHz max
BCP 51...53 EHP00260
10 4
CBO
nA 10 3
fT
5
10 2 10 2 10 1 typ 5
10 0
10 -1
0
50
100
C
150
10 1
10 0
10 1
10 2
mA
10 3
TA
C
Base-emitter saturation voltage
Collector-emitter saturation voltage
I C = f (VBEsat), hFE = 10
BCP 51...53 EHP00263
IC = f (VCEsat), h FE = 10
10 4
BCP 51...53 EHP00264
10 4
C
mA 10 3 100 C 25 C -50C
C
mA 10 3 5 100 C 25 C -50 C
10 2
10 2 5
10 1
10 1 5
10 0
0
0.2
0.4
0.6
0.8
V
1.2
10 0
0
0.2
0.4
0.6
V
0.8
V BEsat
V CEsat
Semiconductor Group Semiconductor Group
44
Au 1998-11-01 -11-1998

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